D444 Mosfet

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N-CHANNEL 20V - 0.011 Ohm - 38A STripFET III POWER MOSFET: D38NH02L: STD38NH02L-1: IPAK: N-CHANNEL 20V - 0.011 Ohm - 38A STripFET III POWER MOSFET: D38x: ML6102C382M: ML6102: SOT-23. D444: AOD444: TO-252: 60V N-Channel MOSFET: D4454: AOD4454: TO-252: 150V N-Channel MOSFET: D446: AOD446: TO-252: N-Channel Enhancement Mode Field Effect. Xilisoft video converter blogspot.

  • General description: The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide extremely low RDS (ON). Those devices are suitable for use in PWM, load switching and general purpose applications. N-CHANNEL MOSFET TO-252.
  • Isc N-Channel MOSFET Transistor AOD446FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose.
  • AOD444 Datasheet (PDF) 0.1. Aod444.pdf Size:248K aosemi. AOD444/AOI44460V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD444/AOI444 combine advanced trench MOSFET 60V12Atechnology with a low resistance package to.
  • D444 N-Channel Trench Power MOSFET Components datasheet pdf data sheet FREE from Datasheet4U.com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic.
D444 Mosfet


CASS
D444 Datasheet Preview

N-Channel Trench Power MOSFET

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General Description
MOSFET technology with a low resistance package to
suitable for use in PWM, load switching and general
Features
RDS(ON)<40mΩ @ VGS=10V
● High UIS and UIS 100% Test
● Power switching application
D444
Schematic Diagram
ID = 15A
Package Marking and Ordering Information
Device
D444
TO-252
-
Symbol
VDS Drain-Source Voltage (VGS=0V)
ID (DC)
IDM (pluse)
EAS
Drain Current (DC) at Tc=100℃
Maximum Power Dissipation(Tc=25℃)
TJ,TSTG
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
Tape width
Quantity
Value
±20
10.5
23
-55 To 175
V
A
A
mJ
CASS SEMICONDUCTOR CO., LTD
http://www.casssemi.com V3.0

Transistor Mosfet D444


D444 Mosfet

Harga Mosfet D444



CASS
D444 Datasheet Preview

N-Channel Trench Power MOSFET

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Symbol
RJC
Value
D444
6.6
℃/W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Min
BVDSS
IDSS
Zero Gate Voltage Drain Current(Tc=25℃)
VGS=0V ID=250μA
VDS=60V,VGS=0V
IGSS Gate-Body Leakage Current
VGS(th) Gate Threshold Voltage
1
VGS=10V, ID=12A
VGS=4.5V, ID=6A
2.3
37
1
±100
45
V
μA
V
mΩ
gFS Forward Transconductance
Coss Output Capacitance
Qg Total Gate Charge
Qgd Gate-Drain Charge
td(on)
tr Turn-on Rise Time
Turn-Off Delay Time
Source-Drain Diode Characteristics
VDS=30V,VGS=0V
VDS=30V,ID=15A
VDS=30V,RL=2.5Ω
12
66
13.5
6.2
3.4
2
PF
PF
nC
nS
nS
ISD Source-Drain Current(Body Diode)
ISDM Pulsed Source-Drain Current(Body Diode)
trr Reverse Recovery Time(Note 1)
TJ=25℃,ISD=1A,VGS=0V
di/dt=100A/μs
0.74 0.99
27 nS
ton Forward Turn-on Time
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, Starting TJ=25℃
-2-

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